SI2316DS-T1-E3 – VISHAY

Part Number:

SI2316DS-T1-E3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 30 V, 2.9 A, SOT23‑3 Package

Datasheet:

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Product Details:

Overview

The SI2316DS-T1-E3 is a N-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for low voltage, high-speed switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 2.9A. The component is supplied in a compact SOT23-3 surface mount package.

Key Features

N-Channel MOSFET technology
30V Drain-Source Voltage (Vds)
2.9A Continuous Drain Current (Id)
Low on-resistance (Rds(on))
SOT23-3 Surface Mount Package

Applications

This N-Channel MOSFET is typically utilized in power management circuits, load switching, and DC-DC converters. Its small size and efficient performance make it suitable for portable devices and space-constrained designs.

DC-DC Conversion
Load Switching
Power Management Circuits