SI2312CDS-T1-GE3 – VISHAY

Part Number:

SI2312CDS-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 20V, 2.8A, 0.1Ω Rds(on), SOT-23 Package

Datasheet:

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Product Details:

Overview

The SI2312CDS-T1-GE3 is an N-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for low voltage, high-speed switching applications. It features a drain-source voltage rating of 20V and a continuous drain current of 2.8A. The device is housed in a compact SOT-23 surface mount package.

Key Features

N-Channel MOSFET configuration
20V Drain-Source Voltage (Vds)
2.8A Continuous Drain Current (Id)
0.1Ω On-Resistance (Rds(on))
SOT-23 Package

Applications

This MOSFET is commonly used in portable devices and power management circuits where efficient switching and small size are critical. Its characteristics make it suitable for a variety of low-voltage applications.

DC-DC Converters
Load Switching
Power Management in Portable Devices