SI2315BDS-T1-E3 – VISHAY

Electronic Components
 
Part Number:
SI2315BDS-T1-E3
 
 
Manufacturer:
 
 
Date Code:
07
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

P-Channel MOSFET, 12 V, 3 A, SOT‑23‑3 Package

 
 
Datasheet:
 
 
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Stock Quantity: 1262

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Product Details:

Overview

The SI2315BDS-T1-E3 is a P-Channel MOSFET manufactured by VISHAY. This component is designed for low voltage switching applications requiring efficient power management. It features a voltage rating of 12V and a continuous drain current of 3A. The MOSFET is supplied in a compact SOT-23-3 surface-mount package, suitable for space-constrained circuit designs.

Key Features

  • P-Channel Enhancement Mode
  • 12V Drain-Source Voltage
  • 3A Continuous Drain Current
  • SOT-23-3 Package

Applications

This P-Channel MOSFET is commonly utilized in portable electronic devices and power management circuits. Its compact size and efficient switching characteristics make it suitable for a range of low-voltage applications where space is a constraint.

  • Load Switching
  • DC-DC Conversion
  • Power Management Circuits
 
 
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