PMGD370XN – NXP
Part Number:
PMGD370XN
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
Description:
Dual N-Channel MOSFET, 20V, 0.88A, SOT363, Trench.
Datasheet:
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Product Details:
Overview
The PMGD370XN is a dual N-Channel enhancement mode Field Effect Transistor (MOSFET) manufactured by NXP Semiconductors. This device is designed for low voltage, low current switching applications. It features Trench MOSFET technology and is supplied in a compact SOT363 surface mount package.
Key Features
- Dual N-Channel configuration
- Voltage rating: 20V
- Continuous drain current: 0.88A
- Low on-state resistance
- SOT363 package
Applications
This dual N-Channel MOSFET is suitable for various low-power switching and control functions. Its small size and efficient performance make it ideal for portable and space-constrained designs.
- Load switching
- Power management circuits
- DC-DC conversion
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