PMGD280UN – NXP

Electronic Components
 
Part Number:
PMGD280UN
 
 
Manufacturer:
 
 
Date Code:
10
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
 
 
Description:

P-Channel MOSFET, 30V Vds, 2A Id, SOT-23 Package.

 
 
Datasheet:
 
 
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Product Details:

Overview

The PMGD280UN is a P-Channel enhancement mode MOSFET manufactured by NXP. This transistor is designed for load switching and general-purpose amplification. It features a drain-source voltage (Vds) rating of 30V and a continuous drain current (Id) of 2A. The PMGD280UN is housed in a small SOT-23 surface-mount package.

Key Features

  • P-Channel Enhancement Mode
  • Vds: 30V
  • Id: 2A
  • Low On-State Resistance
  • SOT-23 Package

Applications

This P-Channel MOSFET is commonly used in various electronic circuits requiring efficient switching and power management. Its compact size and electrical characteristics make it suitable for portable devices and space-constrained applications.

  • Load Switching
  • DC-DC Conversion
  • Power Management Circuits
 
 
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