PMGD175XNE – NXP
Part Number:
PMGD175XNE
Manufacturer:
NXP
Date Code:
RoHS:
RoHS Compliant
MSL:
COO:
Description:
P-Channel MOSFET, 30 V, 6.8 A, SOT-363
Datasheet:
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Product Details:
Overview
The PMGD175XNE is a P-Channel enhancement mode MOSFET manufactured by NXP. This transistor is designed for load switching and general-purpose amplification applications. It features a voltage rating of 30V and a continuous drain current of 6.8A. The PMGD175XNE is supplied in a compact SOT-363 surface mount package.
Key Features
- P-Channel Enhancement Mode
- Voltage Rating: 30V
- Continuous Drain Current: 6.8A
- Low On-State Resistance (RDS(on))
Applications
This P-Channel MOSFET is commonly used in circuits requiring efficient power control and signal amplification. Its small size and electrical characteristics make it suitable for a variety of electronic systems.
- Load Switching
- Power Management Circuits
- DC-DC Conversion
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