MGF0907B-01 – MITSUBISHI

Part Number:

MGF0907B-01

Manufacturer:

MITSUBISHI

Date Code:

RoHS:

MSL:

COO:

Description:

GaAs, N‑Channel, S Band RF Power Field-Effect Transistor

Datasheet:

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Product Details:

Overview

The MGF0907B-01 is a GaAs N-Channel RF Power Field-Effect Transistor manufactured by MITSUBISHI. This transistor is designed for S-band applications, providing amplification in radio frequency circuits. The component is supplied in a standard package suitable for surface mount assembly.

Key Features

GaAs N-Channel Technology
S-Band Frequency Range
RF Power Amplification
Surface Mount Package

Applications

This RF power transistor is commonly used in various communication and radar systems requiring signal amplification at S-band frequencies. Its characteristics make it suitable for deployment in several applications.

Radar Systems
Satellite Communication Uplinks
Wireless Communication Infrastructure