MGF0904A-01 – MITSUBISHI
Part Number:
MGF0904A-01
Manufacturer:
Date Code:
2006
RoHS:
RoHS Unknown
MSL:
COO:
Description:
RF Power Field‑Effect Transistor, 1‑Element, S Band, GaAs, N‑Channel, Metal Semiconductor FET
Datasheet:
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Stock Quantity: 23
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 29.16 |
| 10+ | |
| 50+ | |
| 100+ |
23 in stock
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Product Details:
Overview
The MGF0904A-01 is an RF power field-effect transistor manufactured by MITSUBISHI. This single-element, N-channel GaAs Metal Semiconductor FET is designed for S-band applications. It provides amplification in radio frequency circuits and is supplied in a standard package suitable for surface mount assembly.
Key Features
- RF Power Field-Effect Transistor
- GaAs Material Construction
- N-Channel Configuration
- S-Band Operation
Applications
This RF power transistor is typically used in radio frequency amplifier stages and transmitter circuits. Its characteristics make it suitable for various communication and radar systems.
- Radar Systems
- Communication Transmitters
- RF Amplifiers
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