MGF0905A-01 – MITSUBISHI

Part Number:

MGF0905A-01

Manufacturer:

MITSUBISHI

Date Code:

RoHS:

MSL:

COO:

Description:

RF Power FET, S Band, GaAs, N‑Channel, Metal Semiconductor

Datasheet:

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Product Details:

Overview

The MGF0905A-01 is an N-Channel GaAs RF Power FET manufactured by MITSUBISHI. This field-effect transistor is designed for S-Band applications, utilizing a metal-semiconductor structure for efficient power amplification in radio frequency circuits. It is supplied as a discrete component.

Key Features

GaAs Semiconductor Technology
N-Channel Configuration
S-Band Frequency Range
RF Power Amplification

Applications

This RF power FET is commonly used in various radio frequency systems requiring power amplification. Its design makes it suitable for deployment in radar systems and communication devices operating within its specified frequency range.

Radar Transmitters
Communication Amplifiers
S-Band Transceivers