MGF0906B-01 – MITSUBISHI

Part Number:

MGF0906B-01

Manufacturer:

MITSUBISHI

Date Code:

19+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

S-Band RF Power Field-Effect Transistor, N-Channel, GaAs, Metal Semiconductor FET, 1 Element

Datasheet:

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Product Details:

Overview

The MGF0906B-01 is an S-Band RF power field-effect transistor manufactured by MITSUBISHI. This N-Channel GaAs Metal Semiconductor FET is a single-element device designed for high-frequency amplification. It is commonly employed in radar and communication systems operating within the S-band frequency range.

Key Features

N-Channel GaAs FET
S-Band Operation
Single Element Configuration
High Power Amplification

Applications

This RF power transistor is suited for use in various high-frequency applications requiring signal amplification. Its design allows for integration into systems where reliable performance and power output are critical.

Radar Systems
Communication Transmitters
Microwave Amplifiers