IPP016N06NF2S – INFINEON

Part Number:

IPP016N06NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N‑Channel MOSFET, 60 V, 194 A, 1.6 mΩ, TO‑220 Package

Datasheet:

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Product Details:

Overview

The IPP016N06NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-efficiency switching applications, offering a low on-state resistance of 1.6 mΩ. It features a drain-source voltage rating of 60V and a continuous drain current capability of 194A. The device is packaged in a through-hole TO-220 housing.

Key Features

N-Channel enhancement mode
V_DS: 60V
I_D: 194A
R_DS(on): 1.6 mΩ

Applications

This MOSFET is commonly used in power management circuits and motor control systems, providing efficient power conversion and switching performance. Its low resistance and high current capacity make it suitable for demanding environments.

Synchronous rectification
DC-DC converters
Motor drives