BSS84LT1G – ONSEMI

Electronic Components
 
Part Number:
BSS84LT1G
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

P‑Channel MOSFET, 50 V, 130 mA, SOT‑23‑3

 
 
Datasheet:
 
 
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Product Details:

Overview

The BSS84LT1G is a P-Channel enhancement mode MOSFET manufactured by ONSEMI. This transistor is designed for low voltage, low current switching applications. It features a drain-source voltage rating of 50V and a continuous drain current of 130mA. The BSS84LT1G is supplied in a compact SOT-23-3 surface mount package.

Key Features

  • P-Channel Enhancement Mode
  • 50V Drain-Source Voltage (Vds)
  • 130mA Continuous Drain Current (Id)
  • Low On-Resistance (Rds(on))

Applications

This P-Channel MOSFET is commonly used in portable devices and circuit designs requiring efficient power management. Its small size and low voltage operation make it suitable for a variety of control and switching functions.

  • Load Switching
  • Power Management Circuits
  • DC-DC Conversion
 
 
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