BSS806N H6327 – INFINEON

Part Number:

BSS806N H6327

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N‑Channel MOSFET, 20 V, 2.3 A, SOT‑23 Package

Datasheet:

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Product Details:

Overview

The BSS806N H6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for low voltage, low current switching applications. It features a drain-source voltage rating of 20V and a continuous drain current of 2.3A. The component is housed in a small SOT-23 surface mount package.

Key Features

N-Channel enhancement mode
20V Drain-Source Voltage (Vds)
2.3A Continuous Drain Current (Id)
Logic Level Input
SOT-23 Package

Applications

This MOSFET is commonly used in various low-power electronic circuits where efficient switching is required. Its compact size and low voltage operation make it suitable for portable devices and battery-powered systems.

DC-DC Conversion
Load Switching
Power Management Circuits
Portable Electronics