BSS806NE H6327 – INFINEON
Part Number:
BSS806NE H6327
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
AUSTRIA
Description:
N-Channel MOSFET, 20 V, 2.3 A, 57 mOhm, SOT‑23 Package
Datasheet:
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Product Details:
Overview
The BSS806NE H6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for low voltage, high-speed switching applications. It features a drain-source voltage rating of 20V and a continuous drain current of 2.3A. The device exhibits a low on-state resistance (Rds(on)) of 57 mOhm. It is supplied in a compact SOT-23 surface-mount package.
Key Features
- N-Channel Enhancement Mode
- Vds: 20V Drain-Source Voltage
- Ids: 2.3A Continuous Drain Current
- Rds(on): 57 mOhm at Vgs=4.5V
- SOT-23 Package
Applications
This MOSFET is commonly utilized in various electronic circuits requiring efficient power switching. Its low on-resistance minimizes power dissipation, making it suitable for battery-powered devices and other energy-sensitive applications.
- DC-DC Conversion
- Load Switching
- Power Management Circuits
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