P-Channel MOSFET, 60 V, 360 mA, 1.6 Ohm, SOT-23
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The BSS138P,215 is a P-Channel Enhancement Mode MOSFET manufactured by NEXPERIA. This transistor is designed for low-voltage, low-current switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 360mA. The component is housed in a small SOT-23 surface-mount package, making it suitable for compact circuit designs.
This P-Channel MOSFET is commonly employed in various switching and amplification circuits. Its low threshold voltage and small size make it suitable for portable devices and battery-powered applications. The component’s characteristics allow for efficient control in diverse electronic systems.