BSS123LT1 – ON-SEMI

Overview

The ON-SEMI BSS123LT1 is a highly versatile N-Channel enhancement-mode MOSFET designed for low-power switching applications. Its primary function is to act as an electronically controlled switch, offering low on-resistance (Rds On) of 6 Ohms at a Vgs of 10V, which is critical for minimizing conduction losses. A key design consideration is its relatively low continuous drain current rating of 170 mA; while suitable for signal-level switching and driving small loads, designers must carefully manage thermal dissipation to avoid exceeding its 225 mW power dissipation limit, especially in higher ambient temperatures or continuous duty cycles, to ensure long-term reliability and prevent premature device failure.

Key Features

• 100 V Drain-Source Breakdown Voltage (Vds)
• 170 mA Continuous Drain Current (Id)
• 6 Ohms Maximum Drain-Source On-Resistance (Rds On)
• -55 C to +150 C Operating Temperature Range
• 225 mW Power Dissipation (Pd)
• 2.9 mm x 1.3 mm x 0.94 mm SOT-23-3 Package

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-power digital logic level shifting
• Driving small indicator LEDs and discrete components
• Signal gating and multiplexing in sensor interfaces
• Power sequencing for low-current auxiliary circuits