BSS126H6906XTSA1 – INFINEON

Part Number:

BSS126H6906XTSA1

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 600V, 21mA, 500mW, PG-SOT23, SMD

Datasheet:

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Product Details:

Overview

The BSS126H6906XTSA1 is an N-Channel enhancement mode MOSFET manufactured by Infineon. This component is designed for high voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 21mA. The device has a power dissipation rating of 500mW and is supplied in a PG-SOT23 surface mount package.

Key Features

N-Channel enhancement mode
600V Drain-Source Voltage (Vds)
21mA Continuous Drain Current (Id)
500mW Power Dissipation (Pd)
PG-SOT23 SMD Package

Applications

This MOSFET is commonly used in circuits requiring high voltage switching capabilities. Its small size and surface mount package make it suitable for compact electronic designs. Typical uses include power supplies and high voltage control systems.

High Voltage Power Supplies
LED Lighting Control
Small Signal Switching