BSS123I – INFINEON

Part Number:

BSS123I

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N‑Channel, 100 V, 0.19 A MOSFET, 2400 mOhm, SOT‑23 Package

Datasheet:

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Product Details:

Overview

The BSS123I is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for low voltage, low current switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 0.19A. The BSS123I is housed in a small SOT-23 surface mount package, making it suitable for compact circuit designs.

Key Features

N-Channel Enhancement Mode
100V Drain-Source Voltage
0.19A Continuous Drain Current
2400 mOhm On-State Resistance
SOT-23 Package

Applications

This MOSFET is commonly used in various switching and amplification circuits where space is a constraint. Its low gate charge and on-resistance make it suitable for efficient power management and signal control in diverse electronic systems.

Small Signal Switching
DC-DC Conversion
Load Switching