BFG520W – PHILIPS

Part Number:

BFG520W

Manufacturer:

PHILIPS

Date Code:

2006+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

RF Transistor, NPN, 15V, 70mA, 9GHz, 500mW, 4-SO, Surface Mount

Datasheet:

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Stock Quantity: 5429

Selling Unit: Each

Quantity	Price (ex VAT)
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5429 in stock

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Product Details:

Overview

The PHILIPS BFG520W is an NPN bipolar RF transistor engineered for high-frequency amplification and switching applications. Its critical operational characteristic lies in its impressive 9GHz transition frequency (fT), enabling efficient signal processing in demanding RF front-ends. A key design consideration when utilizing this device is managing its relatively low collector current capability (70mA max) against the need for higher gain, often necessitating careful biasing and impedance matching to avoid saturation or signal distortion, a common trade-off in high-frequency discrete component design.

Key Features

Transistor Type: NPN Bipolar RF
Max Collector Emitter Voltage (Vce): 15V
Transition Frequency (fT): 9GHz
Typical Noise Figure: 1.1dB – 2.1dB @ 900MHz
Max Power Dissipation: 500mW
Package: SOT-343 Reverse Pinning (4-SO)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

Low-noise amplification in VHF/UHF receiver front-ends
High-frequency signal mixing and local oscillator circuits
RF power amplification stages in portable communication devices
Impedance matching networks for broadband RF systems