BFG520W/X,115 – NXP

Part Number:

BFG520W/X,115

Manufacturer:

NXP

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

NPN RF Transistor; 15V; 70mA; 9GHz; 500mW; 4-SO; Surface Mount; Ft: 9GHz

Datasheet:

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Stock Quantity: 940

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Product Details:

Overview

The BFG520W/X,115 is a silicon NPN bipolar RF transistor manufactured by NXP. This device is designed for high-frequency amplification and oscillation applications. It features a maximum collector-emitter voltage of 15V and a collector current of 70mA. The BFG520W/X,115 is housed in a 4-SO surface-mount package.

Key Features

NPN Silicon Bipolar Technology
Transition Frequency (Ft): 9 GHz
Collector-Emitter Voltage (Vceo): 15V
Collector Current (Ic): 70mA
Power Dissipation: 500mW

Applications

This RF transistor is commonly used in various high-frequency circuits requiring low noise and high gain. Its characteristics make it suitable for integration into different electronic systems.

Low Noise Amplifiers (LNA)
Oscillators
RF Mixers