BC849BLT1 – ONSEMI
Part Number:
BC849BLT1
Manufacturer:
Date Code:
0116
RoHS:
Non-RoHS
MSL:
1
COO:
CHINA
Description:
BJT Transistor, NPN, 30V, 100mA, 100MHz, 300mW, SOT-23-3 (TO-236), SMD
Datasheet:
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Stock Quantity: 3000
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.15 |
| 10+ | |
| 50+ | |
| 100+ |
3000 in stock
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Product Details:
Overview
The onsemi BC849BLT1 is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. Its critical operational characteristic lies in its moderate current handling (100 mA collector current) and 30V collector-emitter breakdown voltage, making it suitable for driving small loads or signal conditioning. A key design consideration when using this device is managing its 300 mW power dissipation; exceeding this limit, especially in compact SOT-23-3 packages, can lead to thermal runaway and premature component failure, necessitating careful thermal management in densely populated PCBs.
Key Features
- NPN Bipolar Junction Transistor (BJT)
- 30 V Collector-Emitter Breakdown Voltage (Vceo)
- 100 mA Maximum Collector Current (Ic)
- 100 MHz Transition Frequency (fT)
- 300 mW Maximum Power Dissipation
- SOT-23-3 (TO-236-3) Surface Mount Package
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-power signal amplification in audio pre-amplifiers
- General-purpose switching for LED drivers
- Bias circuitry for operational amplifiers
- Interfacing with microcontrollers for digital control
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