BC849C – NXP
Part Number:
BC849C
Manufacturer:
Date Code:
10
RoHS:
RoHS Compliant
MSL:
Not Applicable
COO:
CHINA
Description:
NPN BJT Transistor, 30V, 100mA, 100MHz, 250mW, TO-236AB, SMD
Datasheet:
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Stock Quantity: 7553
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.06 |
| 10+ | |
| 50+ | |
| 100+ |
7553 in stock
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Product Details:
Overview
The BC849C is a general-purpose NPN bipolar junction transistor (BJT) manufactured by NXP. This device is designed for amplification and switching applications, featuring a collector-emitter voltage of 30V and a collector current of 100mA. It has a transition frequency of 100MHz and a power dissipation rating of 250mW. The BC849C is supplied in a compact TO-236AB surface-mount package, suitable for automated assembly.
Key Features
- NPN BJT Configuration
- 30V Collector-Emitter Voltage
- 100mA Collector Current
- 100MHz Transition Frequency
Applications
This transistor is commonly used in various electronic circuits for signal amplification and switching functions. Its characteristics make it suitable for deployment in low-power designs across diverse sectors.
- Audio Amplifiers
- Switching Circuits
- Signal Processing
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