BC849B – PHILIPS/NXP
NPN BJT, 45V, 100mA, 100MHz, 250mW, SOT-23 SMD Transistor.
Stock Quantity: 12820
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.46 |
| 10+ | |
| 50+ | |
| 100+ |
12820 in stock
Contact us for volume pricing
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- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
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Overview
The Shenzhen Slkormicro Semicon Co., Ltd. BC849B is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. Its key operational characteristic is a high DC current gain (hFE) of 200 at a collector current of 2mA, enabling sensitive signal detection. A critical design consideration for this device is managing its 250mW power dissipation limit; exceeding this can lead to thermal runaway, especially in high-ambient temperature environments, necessitating careful thermal design and potentially heatsinking in demanding circuits.
Key Features
- NPN Bipolar Junction Transistor (BJT)
- Collector-Emitter Breakdown Voltage (Vce): 45 V
- Continuous Collector Current (Ic): 100 mA
- Maximum Power Dissipation: 250 mW
- Transition Frequency (fT): 100 MHz
- Package: SOT-23 (TO-236-3, SC-59)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-power signal amplification in audio pre-amplifiers
- Switching control for small loads in battery-powered devices
- Bias current generation for active filters
- Level shifting in digital interface circuits
