BC848CE6327 – INFINEON
Part Number:
BC848CE6327
Manufacturer:
Date Code:
07+
RoHS:
RoHS Compliant
MSL:
1
COO:
AUSTRIA
Description:
BJT NPN Transistor 30V, 100mA, 250MHz, 330mW, PG-SOT23, Surface Mount
Datasheet:
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Stock Quantity: 4281
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.06 |
| 10+ | |
| 50+ | |
| 100+ |
4281 in stock
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Product Details:
Overview
The Infineon BC848CE6327 is a high-gain NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Its key operational characteristic lies in its significant DC current gain (hFE) range of 200-450, enabling efficient signal amplification. A critical design consideration when utilizing this device in high-frequency circuits is its gain-bandwidth product (fT) of 250 MHz; while capable, exceeding this frequency limit will result in substantial signal attenuation, necessitating careful impedance matching and filtering to maintain signal integrity.
Key Features
- NPN Bipolar Junction Transistor (BJT)
- Maximum DC Collector Current (Ic): 100 mA
- Collector-Emitter Voltage (VCEO): 30 V
- DC Current Gain (hFE): 200 – 450
- Gain-Bandwidth Product (fT): 250 MHz
- SMD/SMT Mounting, SOT-23-3 Package (2.9mm x 1.3mm x 1mm)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-frequency audio amplification stages
- General-purpose signal switching in control circuits
- Bias current generation for active components
- Driver stages for small relays or LEDs
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