BC847CW – NXP

Overview

The NXP BC847CW,115 is a high-performance NPN general-purpose transistor designed for versatile switching and amplification tasks within compact SOT323 SMD packages. Its critical operational characteristic lies in its substantial DC current gain (hFE) of 420 at very low collector currents (10µA), enabling sensitive signal amplification. A key design consideration when utilizing such a high-gain device in high-frequency applications is the potential for parasitic oscillations due to its inherent parasitic capacitances, necessitating careful PCB layout and impedance matching to maintain stability.

Key Features

• Collector-Emitter Breakdown Voltage (VCEO): 45V (min)
• Continuous Collector Current (IC): 100mA (max)
• DC Current Gain (hFE): 420 (min) at VCE=5V, IC=10µA
• Transition Frequency (fT): 100MHz (min) at VCE=5V, IC=10mA
• Collector Capacitance (CCB): 1.5pF (max) at VCB=10V, f=1MHz
• Package: SOT323 (SC-70) SMD, 3-pin

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-noise preamplification stages in audio circuits
• High-impedance buffer stages for sensor interfaces
• General-purpose switching for microcontroller I/O expansion
• Bias current generation for active filters