BC847-215 – NXP

Part Number:

BC847-215

Manufacturer:

NXP

Date Code:

10+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 250 mW Surface Mount TO-236AB

Datasheet:

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Stock Quantity: 1717

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Product Details:

Overview

The Nexperia BC847,215 is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. Its critical operational characteristic lies in its balanced gain (hFE) and moderate breakdown voltage (45V), making it suitable for signal conditioning. A key design consideration for engineers is managing its 250mW power dissipation limit; exceeding this can lead to thermal runaway, especially in higher ambient temperatures or continuous high-current operation, necessitating careful heatsinking or duty cycle management.

Key Features

Collector-Emitter Breakdown Voltage (Vceo): 45 V
Continuous Collector Current (Ic): 100 mA
DC Current Gain (hFE) Min: 110 @ 2mA, 5V
Transition Frequency (fT): 100 MHz
Maximum Power Dissipation: 250 mW
Package: TO-236AB (SOT-23)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

Low-frequency audio amplification stages
Signal level shifting in digital interfaces
Bias current generation for active components
General-purpose switching in control circuits