BC846 – TBC

Overview

The Nexperia BC846,215 is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. Its key operational characteristic is a robust 65V collector-emitter breakdown voltage, enabling its use in circuits with moderate voltage swings. A critical design consideration when employing the BC846,215 is managing its 250mW power dissipation; exceeding this limit, especially in high ambient temperatures or with continuous high current operation, can lead to thermal runaway and premature device failure, necessitating careful thermal management and component selection for reliability.

Key Features

• NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Breakdown Voltage (Vceo): 65 V
• Continuous Collector Current (Ic): 100 mA
• DC Current Gain (hFE) (min): 110 @ 2mA, 5V
• Transition Frequency (fT): 100 MHz
• Maximum Power Dissipation: 250 mW
• Package: TO-236AB (SC-59/SOT-23-3)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-power audio amplification stages
• General-purpose signal switching in control circuits
• Bias current generation for active components
• Voltage level shifting in digital interfaces