BSC025N08LS5 – INFINEON

Part Number:

BSC025N08LS5

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

80 V, 100 A, 2.1 mOhm N‑Channel MOSFET, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC025N08LS5 is an N-Channel enhancement mode Power MOSFET from Infineon Technologies. This device is characterized by a drain-source voltage rating of 80V and a continuous drain current of 100A. It features a typical on-state resistance of 2.1 mOhm. The component is supplied in a TDSON-8 surface mount package.

Key Features

80V Drain-Source Voltage (Vds)
100A Continuous Drain Current (Id)
2.1 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode
TDSON-8 Package

Applications

This MOSFET is typically used in power management circuits and switching applications requiring efficient power conversion and high current handling capabilities. Its low on-state resistance minimizes power losses, making it suitable for diverse electronic systems.

Synchronous Rectification
DC-DC Converters
Motor Control