BSC019N06NS – INFINEON

Part Number:

BSC019N06NS

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel, 60 V, 192 A MOSFET, 1.7 mOhm, TDSON‑8FL Package

Datasheet:

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Product Details:

Overview

The BSC019N06NS is an N-Channel enhancement mode MOSFET from Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 60V and a continuous drain current capability of 192A. The BSC019N06NS exhibits a low on-state resistance of 1.7 mOhm and is provided in a TDSON-8FL surface mount package.

Key Features

N-Channel Enhancement Mode
60V Drain-Source Voltage (Vds)
192A Continuous Drain Current (Id)
1.7 mOhm On-State Resistance (Rds(on))

Applications

This MOSFET is typically used in power management circuits where high efficiency and compact size are required. Its low on-resistance minimizes power losses, making it suitable for demanding applications.

Synchronous Rectification
DC-DC Converters
Motor Control