BSC009NE2LS5 – INFINEON

Part Number:

BSC009NE2LS5

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N‑Channel, 25 V, 223 A MOSFET, 0.75 mOhm, SuperSO8 Package

Datasheet:

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Product Details:

Overview

The BSC009NE2LS5 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring high current and low on-resistance. It features a drain-source voltage of 25V and a continuous drain current capability of 223A. The component is packaged in a SuperSO8 surface-mount format.

Key Features

N-Channel MOSFET technology
25 V Drain-Source Voltage (Vds)
223 A Continuous Drain Current (Id)
0.75 mOhm On-Resistance (Rds(on))
SuperSO8 Package

Applications

This MOSFET is commonly utilized in power management circuits and high-frequency switching regulators. Its low on-resistance minimizes power loss, making it suitable for efficient energy conversion in various electronic systems.

Synchronous Rectification
DC-DC Converters
Motor Control