BSC190N15NS3 G – INFINEON

Part Number:

BSC190N15NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 150 V, 50 A, 19.0 mOhm, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC190N15NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring a voltage rating of 150V and a continuous drain current of 50A. It features a low on-state resistance of 19.0 mOhm and is supplied in a space-saving TDSON‑8 package.

Key Features

N-Channel Enhancement Mode
Voltage Rating: 150 V
Continuous Drain Current: 50 A
On-State Resistance: 19.0 mOhm (typical)

Applications

This MOSFET is suitable for various power management and switching circuits where efficient and compact designs are required. Its characteristics make it appropriate for use in several industrial and consumer electronic products.

Synchronous Rectification
DC-DC Conversion
Motor Control