BSC118N10NS G – INFINEON

Part Number:

BSC118N10NS G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

100 V, 71 A, 12 mOhm N‑Channel MOSFET, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC118N10NS G is an N-Channel MOSFET manufactured by Infineon. This transistor is designed for switching applications requiring efficient power control. It features a drain-source voltage rating of 100V and a continuous drain current of 71A. The device exhibits a typical on-state resistance of 12 mOhm. It is packaged in a TDSON-8 surface-mount format.

Key Features

N-Channel Enhancement Mode
VDS: 100V
ID: 71A
RDS(on): 12 mOhm (typical)

Applications

This MOSFET is suitable for various power management and switching circuits. Its low on-resistance minimizes power losses, making it ideal for high-efficiency designs. The device’s voltage and current ratings allow for use in moderate power applications.

Synchronous Rectification
DC-DC Conversion
Motor Control