BSC16DN25NS3 G – INFINEON

Part Number:

BSC16DN25NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

250 V, 10.9 A, 165 mOhm N‑Channel MOSFET, TDSON‑8 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The BSC16DN25NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring moderate voltage and current handling capabilities. It features a drain-source voltage rating of 250V and a continuous drain current of 10.9A. The device exhibits a typical on-state resistance of 165 mOhm and is available in a TDSON-8 package.

Key Features

N-Channel enhancement mode
VDS: 250V
ID: 10.9A
RDS(on): 165 mOhm (typical)

Applications

This MOSFET is suitable for various power management and switching circuits. Its characteristics make it appropriate for use in systems where efficient power conversion and control are needed.

DC-DC converters
Motor control circuits
Lighting control