BSC196N10NS G – INFINEON

Part Number:

BSC196N10NS G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N-Channel MOSFET, 100 V, 45 A, 20 mOhm, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC196N10NS G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring efficient power management at voltages up to 100V. It features a maximum drain current of 45A and is housed in a TDSON-8 surface-mount package, providing a compact footprint for high-density circuit board layouts.

Key Features

N-Channel enhancement mode
100V Drain-Source Voltage (Vds)
45A Continuous Drain Current (Id)
20 mOhm On-State Resistance (Rds(on))
TDSON-8 Package

Applications

This MOSFET is suitable for various power switching and control applications. Its low on-resistance minimizes power losses, making it appropriate for environments demanding high efficiency and thermal performance. The TDSON-8 package allows for compact designs in space-constrained applications.

DC-DC Converters
Motor Control Circuits
Load Switching