IPB600N25N3 G – INFINEON

Part Number:

IPB600N25N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N-Channel MOSFET, 250 V, 25 A, 60 mOhm, TO-263 Package

Datasheet:

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Product Details:

Overview

The IPB600N25N3 G is an N-Channel enhancement mode MOSFET manufactured by INFINEON. This power transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 250V and a continuous drain current of 25A. The device exhibits a typical on-state resistance of 60 mOhm and is provided in a TO-263 package for surface mount assembly.

Key Features

N-Channel enhancement mode
VDS = 250V
ID = 25A
RDS(on) = 60 mOhm (typical)
TO-263 package

Applications

This MOSFET is suitable for various power control and conversion circuits. Its characteristics make it useful in systems needing efficient switching and low conduction losses.

Switching power supplies
Motor control circuits
DC-DC converters