IPB65R125CFD7 – INFINEON

Electronic Components
 
Part Number:
IPB65R125CFD7
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
GERMANY
 
 
Description:

650 V, 19 A N‑Channel MOSFET, 100 mOhm, D2PAK Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPB65R125CFD7 is a 650V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor features a maximum drain-source on-resistance of 100 mOhms and a continuous drain current of 19A. It is supplied in a D2PAK (TO-263) package, making it suitable for surface mount assembly.

Key Features

  • 650V Drain-Source Voltage (Vds)
  • 19A Continuous Drain Current (Id)
  • 100 mOhm On-Resistance (Rds(on))
  • N-Channel Enhancement Mode
  • D2PAK (TO-263) Package

Applications

This MOSFET is commonly used in power switching circuits and applications that require efficient power management. Its voltage and current ratings make it suitable for various industrial and consumer electronic devices.

  • Switch Mode Power Supplies (SMPS)
  • Motor Control Circuits
  • DC-DC Converters
  • Power Factor Correction (PFC)
 
 
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