650 V, 19 A N‑Channel MOSFET, 100 mOhm, D2PAK Package
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The IPB65R125CFD7 is a 650V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor features a maximum drain-source on-resistance of 100 mOhms and a continuous drain current of 19A. It is supplied in a D2PAK (TO-263) package, making it suitable for surface mount assembly.
This MOSFET is commonly used in power switching circuits and applications that require efficient power management. Its voltage and current ratings make it suitable for various industrial and consumer electronic devices.