IPB60R060P7 – INFINEON

Part Number:

IPB60R060P7

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N-Channel MOSFET, 600 V, 48 A, 49 mOhm, D2PAK Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The IPB60R060P7 is an N-Channel enhancement mode Power MOSFET manufactured by Infineon Technologies. This device is designed for high-voltage switching applications, offering a drain-source voltage (Vds) rating of 600V and a continuous drain current (Id) of 48A. It features a low on-state resistance (Rds(on)) of 49 mOhm. The component is supplied in a D2PAK (TO-263) package, suitable for surface mount assembly.

Key Features

600V Drain-Source Voltage (Vds)
48A Continuous Drain Current (Id)
49 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This Power MOSFET is commonly used in power electronic circuits requiring efficient high-voltage switching. Its characteristics make it suitable for various applications where power management and control are critical.

Switch Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Motor control circuits