IPB60R120P7 – INFINEON

Electronic Components
 
Part Number:
IPB60R120P7
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
GERMANY
 
 
Description:

600 V, 78 A, 120 mOhm CoolMOS MOSFET, TO263 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPB60R120P7 is a 600V CoolMOS Power MOSFET manufactured by Infineon Technologies. This N-channel enhancement mode MOSFET is designed for high-efficiency switching applications. It features a low on-state resistance of 120 mOhm and a continuous drain current of 78A. The component is supplied in a TO-263 package, suitable for surface mount assembly.

Key Features

  • 600V Drain-Source Voltage
  • 78A Continuous Drain Current
  • 120 mOhm On-State Resistance (RDS(on))
  • N-Channel Enhancement Mode

Applications

This MOSFET is commonly used in power electronics circuits requiring efficient switching and low power dissipation. Its characteristics make it appropriate for various power supply and motor control implementations.

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC)
  • DC-DC Converters
 
 
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