SI4190BDY-T1-GE3 – VISHAY
Part Number:
SI4190BDY-T1-GE3
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N‑Channel 100 V (D‑S) MOSFET, SO‑8
Datasheet:
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Product Details:
Overview
The SI4190BDY-T1-GE3 is a N-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for switching applications requiring a drain-source voltage of up to 100V. It is supplied in a compact SO-8 surface mount package, suitable for automated assembly and high-density circuit board layouts.
Key Features
- N-Channel MOSFET configuration
- Maximum drain-source voltage (Vds): 100V
- SO-8 surface mount package
- Enhancement mode operation
Applications
This N-Channel MOSFET is commonly utilized in power management circuits and load switching applications. Its characteristics make it appropriate for use in systems where efficient power control is needed. The SO-8 package allows for integration in space-constrained designs.
- DC-DC converters
- Load switching circuits
- Power management systems
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