SI4186DY-T1-GE3 – VISHAY

Part Number:

SI4186DY-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 20V, 35.8A, 3W/6W, 8-SOIC

Datasheet:

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Product Details:

Overview

The SI4186DY-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for power switching and amplification applications. It features a drain-source voltage of 20V and a continuous drain current of 35.8A. The device is housed in an 8-SOIC package and provides power dissipation of 3W or 6W depending on mounting conditions.

Key Features

N-Channel configuration
20V Drain-Source Voltage (Vds)
35.8A Continuous Drain Current (Id)
8-SOIC Surface Mount Package

Applications

This MOSFET is suitable for a variety of power management and switching circuits. Its characteristics make it useful in systems requiring efficient current control and low on-resistance.

DC-DC Converters
Load Switching
Power Supplies