SI4128DY-T1-GE3 – VISHAY
Part Number:
SI4128DY-T1-GE3
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N-Channel 30 V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
Datasheet:
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Stock Quantity: 203
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.17 |
| 10+ | |
| 50+ | |
| 100+ |
203 in stock
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Product Details:
Overview
The SI4128DY-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 10.9A at a specific ambient temperature (Ta). The device is housed in a surface-mount 8-SOIC package. Power dissipation is rated at 2.4W (Ta) and 5W (Tc).
Key Features
- N-Channel MOSFET
- 30V Drain-Source Voltage
- 10.9A Continuous Drain Current (Ta)
- Surface Mount 8-SOIC Package
Applications
This MOSFET is commonly used in power management circuits and load switching applications. Its characteristics make it suitable for various electronic systems requiring efficient power control.
- DC-DC Converters
- Load Switching
- Power Management
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