SI4178DY-T1-GE3 – VISHAY

Electronic Components
 
Part Number:
SI4178DY-T1-GE3
 
 
Manufacturer:
 
 
Date Code:
11
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
 
 
Description:

N-Channel 30V MOSFET, PowerPAK® SO-8, 0.0023Ω Rds(on), 75A Id

 
 
Datasheet:
 
 
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Product Details:

Overview

The SI4178DY-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for power switching applications, offering a drain-source voltage (Vds) rating of 30V and a continuous drain current (Id) of 75A. It features a low on-resistance (Rds(on)) of 0.0023Ω and is supplied in a PowerPAK® SO-8 package for efficient thermal management.

Key Features

  • N-Channel MOSFET configuration
  • 30V Drain-Source Voltage (Vds)
  • 75A Continuous Drain Current (Id)
  • 0.0023Ω On-Resistance (Rds(on))
  • PowerPAK® SO-8 package

Applications

This MOSFET is suitable for various power management and switching circuits. Its low on-resistance minimizes power loss, making it appropriate for high-efficiency designs. The PowerPAK® SO-8 package allows for effective heat dissipation, enabling use in demanding environments.

  • DC-DC converters
  • Load switching
  • Motor control
 
 
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