MMUN2211LT1G – ONSEMI
Pre-Biased NPN BJT, 50 V, 100 mA, 246 mW, SOT-23-3 Package
Stock Quantity: 3091
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.07 |
| 10+ | |
| 50+ | |
| 100+ |
3091 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
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Overview
The MMUN2211LT1G is a pre-biased NPN bipolar junction transistor (BJT) manufactured by ONSEMI. This device integrates a bias resistor network to simplify circuit design and reduce component count. It is designed for general-purpose amplification and switching applications, offering a collector-emitter voltage of 50 V and a collector current of 100 mA. The transistor is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained applications.
Key Features
- Pre-biased NPN transistor
- Collector-emitter voltage: 50V
- Collector current: 100mA
- Power dissipation: 246mW
- SOT-23-3 package
Applications
This pre-biased NPN transistor is commonly used in diverse electronic circuits requiring signal amplification or switching. Its integrated resistor network simplifies implementation in various applications.
- Digital circuit switching
- Load drivers
- Amplification circuits
- Interface circuits
