MMUN2232LT1G – ONSEMI
BJT, NPN Pre-Biased, 50V, 100mA, 246mW, SOT-23-3 (TO-236), Surface Mount
Stock Quantity: 6117
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.13 |
| 10+ | |
| 50+ | |
| 100+ |
6117 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
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- Any import duties or taxes are the responsibility of the receiver
Overview
The MMUN2232LT1G is an NPN pre-biased Bipolar Junction Transistor (BJT) manufactured by ONSEMI. This device integrates a bias resistor network to simplify circuit design and reduce component count. It features a collector-emitter voltage rating of 50V and a continuous collector current of 100mA. The MMUN2232LT1G is housed in a SOT-23-3 (TO-236) surface mount package and has a power dissipation of 246mW.
Key Features
- NPN Pre-Biased Transistor
- 50V Collector-Emitter Voltage
- 100mA Continuous Collector Current
- Integrated Bias Resistors
Applications
This pre-biased BJT is commonly used in various electronic circuits where simplified biasing and reduced component count are desired. Its compact size and integrated resistors make it suitable for space-constrained applications.
- Digital Circuit Switching
- Load Driver Circuits
- Inverter Circuits
