MMUN2115LT1 – ONSEMI

Part Number:

MMUN2115LT1

Manufacturer:

ONSEMI

Date Code:

RoHS:

Non-RoHS

MSL:

COO:

Description:

PNP Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, TO-236AB Package

Datasheet:

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Stock Quantity: 1427

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Product Details:

Overview

The MMUN2115LT1 is a PNP bipolar junction transistor (BJT) manufactured by ONSEMI. This device is designed for general purpose amplification and switching applications, offering a collector current (I(C)) rating of 0.1A and a collector-emitter breakdown voltage (V(BR)CEO) of 50V. It is supplied in a compact TO-236AB (SOT-23) surface mount package.

Key Features

PNP Polarity
0.1A Collector Current (I(C))
50V Collector-Emitter Breakdown Voltage (V(BR)CEO)
TO-236AB (SOT-23) Package

Applications

This PNP transistor is commonly used in various electronic circuits requiring signal amplification or switching. Its small size and electrical characteristics make it suitable for compact designs and low-power applications.

General Purpose Amplification
Switching Circuits
Driver Stages