MMUN2214LT1G – ON-SEMI
Pre-Biased NPN BJT, 50 V, 100 mA, 246 mW, SOT-23-3
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Overview
The MMUN2214LT1G is a pre-biased NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device integrates a bias resistor network to simplify circuit design and reduce component count. It is rated for a collector-emitter voltage of 50 V and a collector current of 100 mA, with a power dissipation of 246 mW. The transistor is housed in a compact SOT-23-3 surface-mount package.
Key Features
- NPN BJT Configuration
- Integrated Bias Resistors
- 50 V Collector-Emitter Voltage
- 100 mA Collector Current
Applications
This pre-biased NPN transistor is suitable for various general-purpose switching and amplification applications where space and component count are critical. The integrated resistors eliminate the need for external biasing components, simplifying circuit design and reducing board space.
- Digital Circuit Switching
- Load Driver Circuits
- Level Shifters
