SPD06N80C3 – INFINEON

Part Number:

SPD06N80C3

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel MOSFET, 800 V, 6 A, 900 mOhm, TO-252 Package

Datasheet:

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Product Details:

Overview

The SPD06N80C3 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high voltage switching applications, featuring a drain-source voltage rating of 800V and a continuous drain current of 6A. It exhibits a typical on-state resistance of 900 mOhm. The component is supplied in a TO-252 package for surface mount assembly.

Key Features

800V Drain-Source Voltage (Vds)
6A Continuous Drain Current (Id)
900 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode
TO-252 Package

Applications

This MOSFET is commonly employed in power electronic circuits requiring efficient high-voltage switching. Its characteristics make it suitable for a range of industrial and consumer applications where reliable performance is essential.

Switch Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Lighting Ballasts