P‑Channel MOSFET, 100 V, 850 mOhm, 4.2 A, TO‑252‑3 Package
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The SPD04P10PL G is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This device features a drain-source voltage rating of 100V and a typical on-state resistance of 850 mOhm at a gate-source voltage of -10V. It is capable of handling a continuous drain current of 4.2A and is supplied in a TO-252-3 package for surface mount applications.
This P-Channel MOSFET is suitable for various power management and switching applications. Its characteristics make it useful in scenarios requiring efficient high-side switching with moderate current demands.