SPD04P10PL G – INFINEON

Electronic Components
 
Part Number:
SPD04P10PL G
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
AUSTRIA
 
 
Description:

P‑Channel MOSFET, 100 V, 850 mOhm, 4.2 A, TO‑252‑3 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The SPD04P10PL G is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This device features a drain-source voltage rating of 100V and a typical on-state resistance of 850 mOhm at a gate-source voltage of -10V. It is capable of handling a continuous drain current of 4.2A and is supplied in a TO-252-3 package for surface mount applications.

Key Features

  • P-Channel Enhancement Mode
  • VDS = 100V
  • RDS(on) = 850 mΩ (typical)
  • ID = 4.2A
  • TO-252-3 Package

Applications

This P-Channel MOSFET is suitable for various power management and switching applications. Its characteristics make it useful in scenarios requiring efficient high-side switching with moderate current demands.

  • DC-DC converters
  • Load switching
  • Power management circuits
 
 
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