SIS488DN-T1-GE3 – VISHAY

Part Number:

SIS488DN-T1-GE3

Manufacturer:

VISHAY

Date Code:

22+

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 40 V, 40 A, PPAK1212‑8 Package

Datasheet:

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Product Details:

Overview

The SIS488DN-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications requiring efficient power management. It features a drain-source voltage of 40V and a continuous drain current of 40A. The SIS488DN-T1-GE3 is housed in a compact PPAK1212-8 package, suitable for surface mount assembly.

Key Features

N-Channel Enhancement Mode
VDS: 40V
ID: 40A
Low On-Resistance (RDS(on))

Applications

This MOSFET is commonly used in various power control and conversion circuits. Its characteristics make it suitable for implementation in systems needing efficient switching and minimal power loss.

DC-DC Converters
Load Switching
Power Management Circuits