SIS430DN-T1-GE3 – VISHAY
Part Number:
SIS430DN-T1-GE3
Manufacturer:
Date Code:
25
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N-Channel MOSFET, 25 V, 21.5 A, PowerPAK 1212-8 Package
Datasheet:
Spotted a problem with product information? – let us know
ORDER NOW
Stock Quantity: 1417
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 2.92 |
| 10+ | |
| 50+ | |
| 100+ |
1417 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
Product Details:
Overview
The SIS430DN-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This transistor is designed for switching and amplification applications, operating with a drain-source voltage of up to 25V and a continuous drain current of 21.5A. It is supplied in a space-efficient PowerPAK 1212-8 surface-mount package.
Key Features
- N-Channel Enhancement Mode
- 25V Drain-Source Voltage (Vds)
- 21.5A Continuous Drain Current (Id)
- Low On-Resistance (Rds(on))
Applications
This MOSFET is suitable for various power management and load switching tasks. Its compact size and efficient performance make it well-suited for integration into modern electronic devices. Typical deployments include the following:
- DC-DC Converters
- Load Switching
- Power Management Circuits
Spotted a problem with product information? – let us know
Related products
PART NUMBER
CATEGORY
MANUFACTURER
